2008. 9. 17 1/3 semiconductor technical data kic7s14fu silicon monolithic cmos digital integrated circuit revision no : 2 schmitt inverter the kic7s14fu is a high speed c 2 mos schmitt inverter fabricated with silicon gate c 2 mos technology. it achieves a high speed operation similar to equivalent lsttl while maintaining the c 2 mos low power dissipation. pin configuration and function are the same as the kic7su04fu but input have 25% v cc hysteresis and with its schmitt trigger function, the kic7s14fu can be used as line receivers which will receive slow input signal. input is equipped with protection circuits against static discharge or transinent excess voltage. features ? high speed : t pd =11ns(typ.) at v cc =5v. ? low power dissipation : i cc =1 a(max.) at ta=25 ? . ? high noise immunity : v h =1.1v at v cc =5v. ? output drive capability : 5 lsttl loads. ? symmetrical output impedance : | i oh |=i ol =2ma. ? balanced propagation delays : t plh ?? t phl ? wide operating voltage range : v cc(opr) =2 ?- 6v. dim millimeters a b d g usv 2.00 0.20 1.25 0.1 2.1 0.1 0.2+0.10/-0.05 0-0.1 0.9 0.1 0.65 0.15+0.1/-0.05 b1 h c t g 1 3 2 b b1 d a h t 5 4 c c a1 1.3 0.1 a1 + _ + _ + _ + _ + _ maximum ratings (ta=25 ? ) marking type name lot no. su pin connection (top view) 1 2 3 4 5v cc out y n c in a gnd characteristic symbol rating unit supply voltage range v cc -0.5 ?- 7 v dc input voltage v in -0.5 ?- v cc +0.5 v dc output voltage v out -0.5 ?- v cc +0.5 v input diode current i ik ?? 20 ma output diode current i ok ?? 20 ma dc output current i out ?? 12.5 ma dc v cc /ground current i cc ?? 50 ma power dissipation p d 200 mw storage temperature t stg -65 ?- 150 ? lead temperature (10s) t l 260 ?
2008 . 9 .17 2/3 kic7s14fu revision no : 2 in a (2) (4) out y logic diagram recommended operating conditions dc electrical characteristics truth table a y l h h l characteristic symbol rating unit supply voltage v cc 2 ?- 6 v input voltage v in 0 ?- v cc v output voltage v out 0 ?- v cc v operating temperature t opr -40 ?- 85 ? characteristic symbol test condition ta=25 ? ta=-40 ?- 85 ? unit v cc min. typ. max. min. max. positive threshold voltage v p - 2.0 4.5 6.0 1.0 2.3 3.0 1.25 2.7 3.5 1.5 3.15 4.2 1.0 2.3 3.0 1.5 3.15 4.2 v negative threshold voltage v n - 2.0 4.5 6.0 0.3 1.13 1.5 0.65 1.6 2.3 0.9 2.0 2.6 0.3 1.13 1.5 0.9 2.0 2.6 v hysteresis voltage v h - 2.0 4.5 6.0 0.3 0.6 0.8 0.6 1.1 1.2 1.0 1.4 1.7 0.3 0.6 0.8 1.0 1.4 1.7 v high-level output voltage v oh v in =v il i oh =-20 a 2.0 4.5 6.0 1.9 4.4 5.9 2.0 4.5 6.0 - - - 1.9 4.4 5.9 - - - v i oh =-2ma i oh =-2.6ma 4.5 6.0 4.18 5.68 4.31 5.80 - - 4.13 5.63 - - low-level output voltage v ol v in =v ih i ol =20 a 2.0 4.5 6.0 - - - 0.0 0.0 0.0 0.1 0.1 0.1 - - - 0.1 0.1 0.1 v i ol =2ma i ol =2.6ma 4.5 6.0 - - 0.17 0.18 0.26 0.26 - - 0.33 0.33 input leakage current i in v in =v cc or gnd 6.0 - - ?? 0.1 - ?? 1.0 a quiescent supply current i cc v in =v cc or gnd 6.0 - - 1.0 - 10.0
2008 . 9 .17 3/3 kic7s14fu revision no : 2 ac electrical characteristics (c l =15pf, v cc =5v, ta=25 ? ) ac electrical characteristics (c l =50pf, input t r =t f =6ns) note 1 : c pd is defined as the value of internal equivalent capacitance which is calculated from the operating current consumption without l oad. average operating current can be obtained by the equation : i cc(opr) =c pd ? v cc ? f in + i cc characteristic symbol test condition ta=25 ? unit min. typ. max. output transition time t tlh t thl - - 4 8 ns propagation delay time t plh t phl - - 11 21 ns characteristic symbol test condition ta=25 ? ta=-40 ?- 85 ? unit v cc min. typ. max. min. max. output transition time t tlh t thl - 2.0 4.5 6.0 - - - 50 14 12 125 25 21 - - - 145 30 24 ns propagation delay time t plh t phl - 2.0 4.5 6.0 - - - 48 12 9 100 20 17 - - - 235 48 40 ns input capacitance c in - - 5 10 - 10 pf power dissipation capacitance c pd (note 1) - 28 - - -
|
